Density dependent local structures in InTe phase-change materials

Chalcogenide phase-change materials based random access memory (PCRAM) is one of the leading candidates for development non-volatile and neuro-inspired computing technologies. Recent work shows indium to be an important alloying element PCRAM, while a thorough understanding parent compound InTe, in particular, its amorphous phase, still lacking. In this work, we carry out ab initio simulations chemical bonding analyses on various crystalline polymorphs InTe. We reveal that local geometries are highly density dependent structures, forming In-centered tetrahedral motifs under ambient conditions but defective octahedral pressure, which stems from characters polymorphs. addition, our molecular dynamics predict rapid crystallization capability InTe pressure. Finally, make suggestion better use propose “active” device design utilize both thermal mechanical effects applications.